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DDR3 1333This memory is rated at 1333MHz and delivers up to 10.6Gbps bandwidth per channel. You’ll find it ideal for the evolving needs of today’s operating systems and applications. 
FIRST-CLASS QUALITYSuperior components, quality construction, and rigorous testing guarantee you unparalleled reliability and stability for hassle-free use in challenging environments.
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Kingston DDR3 8GB 1333MHz SODIMM PC3-10600 CL9 KVR1333D3S9/8G Laptop RAM Memory
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- SKU: KVR1333D3S9/8G
- Device Segment: Laptop
- Type: DDR3 Memory
- Capacity: 8 GB
- Speed: 1333 MHz
Estimated Delivery: Mon, Apr 21 – Fri, Apr 25
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Original price was: ₹16,960.00.₹2,395.00Current price is: ₹2,395.00.
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Kingston DDR3 8GB 1333MHz SODIMM PC3-10600 CL9 KVR1333D3S9/8G Laptop RAM Memory
With speed, quality, and savings, the Kingston laptop memory is a trusted, great-performing upgrade at a low price. It’s designed and built to be stable and reliable in challenging conditions. Add this memory to your system and watch the performance soar!
DDR3 1333This memory is rated at 1333MHz and delivers up to 10.6Gbps bandwidth per channel. You’ll find it ideal for the evolving needs of today’s operating systems and applications. kingston Cas Latency 9 ensures smooth system response.- FIRST-CLASS QUALITYSuperior components, quality construction, and rigorous testing guarantee you unparalleled reliability and stability for hassle-free use in challenging environments.
Kingston Value RAM’s 1G x 64-bit (8GB) DDR3-1333 CL9 SDRAM (Synchronous DRAM), 2Rx8, memory module, based on sixteen 512M x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR3-1333 timing of 9-9-9 at 1.5V. This 204 pin SODIMM uses gold contact fingers.
Key Feature
- JEDEC standard 1.5V (1.425V ~1.575V) Power Supply
- VDDQ = 1.5V (1.425V ~ 1.575V)
- 667MHz fCK for 1333Mb/sec/pin
- 8 independent internal bank
- Programmable CAS Latency: 9, 8, 7, 6
- Programmable Additive Latency: 0, CL – 2, or CL – 1 clock
- Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
- 8-bit pre-fetch
- Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
- Bi-directional Differential Data Strobe
- Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
- On Die Termination using ODT pin
- Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C
- Asynchronous Reset
- PCB: Height 1.18” (30mm), double sided component
| CL (IDD) | 9 cycles |
| Row Cycle Time (tRCmin) | 49.5 ns (min.) |
| Refresh to Active/Refresh | 260 ns (min.) |
| Command Time (tRFCmin) | (Please provide the value for tRFCmin) |
| Row Active Time (tRASmin) | 36 ns (min.) |
| Power (Operating) | 1.200 W* |
| UL Rating | 94 V - 0 |
| Operating Temperature | 0°C to 85°C |
| Storage Temperature |
| Weight | 1 kg |
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